JPH0427712B2 - - Google Patents

Info

Publication number
JPH0427712B2
JPH0427712B2 JP56122995A JP12299581A JPH0427712B2 JP H0427712 B2 JPH0427712 B2 JP H0427712B2 JP 56122995 A JP56122995 A JP 56122995A JP 12299581 A JP12299581 A JP 12299581A JP H0427712 B2 JPH0427712 B2 JP H0427712B2
Authority
JP
Japan
Prior art keywords
type
semiconductor
protection element
region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56122995A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5825264A (ja
Inventor
Isao Yoshida
Takeaki Okabe
Mitsuo Ito
Kazutoshi Ashikawa
Tetsuo Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56122995A priority Critical patent/JPS5825264A/ja
Priority to GB08220894A priority patent/GB2103877B/en
Priority to DE19823229250 priority patent/DE3229250A1/de
Publication of JPS5825264A publication Critical patent/JPS5825264A/ja
Priority to US06/793,243 priority patent/US4688323A/en
Priority to HK454/86A priority patent/HK45486A/xx
Priority to MY555/86A priority patent/MY8600555A/xx
Priority to US07/062,388 priority patent/US4831424A/en
Publication of JPH0427712B2 publication Critical patent/JPH0427712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP56122995A 1981-08-07 1981-08-07 絶縁ゲート型半導体装置 Granted JPS5825264A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP56122995A JPS5825264A (ja) 1981-08-07 1981-08-07 絶縁ゲート型半導体装置
GB08220894A GB2103877B (en) 1981-08-07 1982-07-20 Gate protection for insulated gate semiconductor devices
DE19823229250 DE3229250A1 (de) 1981-08-07 1982-08-05 Halbleitervorrichtung mit isoliertem gate und verfahren zu ihrer herstellung
US06/793,243 US4688323A (en) 1981-08-07 1985-10-31 Method for fabricating vertical MOSFETs
HK454/86A HK45486A (en) 1981-08-07 1986-06-19 Insulated gate semiconductor device and method for fabricating same
MY555/86A MY8600555A (en) 1981-08-07 1986-12-30 Insulated gate semiconductor device and method for fabricating same
US07/062,388 US4831424A (en) 1981-08-07 1987-06-15 Insulated gate semiconductor device with back-to-back diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56122995A JPS5825264A (ja) 1981-08-07 1981-08-07 絶縁ゲート型半導体装置

Publications (2)

Publication Number Publication Date
JPS5825264A JPS5825264A (ja) 1983-02-15
JPH0427712B2 true JPH0427712B2 (en]) 1992-05-12

Family

ID=14849669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56122995A Granted JPS5825264A (ja) 1981-08-07 1981-08-07 絶縁ゲート型半導体装置

Country Status (6)

Country Link
US (2) US4688323A (en])
JP (1) JPS5825264A (en])
DE (1) DE3229250A1 (en])
GB (1) GB2103877B (en])
HK (1) HK45486A (en])
MY (1) MY8600555A (en])

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
JPS60144972A (ja) * 1984-01-06 1985-07-31 Toshiba Corp 半導体装置
JPS60196974A (ja) * 1984-03-19 1985-10-05 Toshiba Corp 導電変調型ｍｏｓｆｅｔ
JPS6144454A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
JPH0680833B2 (ja) * 1985-07-08 1994-10-12 日本電気株式会社 縦型電界効果トランジスタ
DE3671581D1 (de) * 1985-07-09 1990-06-28 Siemens Ag Mosfet mit temperaturschutz.
JPH088356B2 (ja) * 1985-11-15 1996-01-29 日本電気株式会社 縦型電界効果トランジスタ
JPS62186565A (ja) * 1986-02-12 1987-08-14 Mitsubishi Electric Corp 電界効果型半導体装置
IT1213411B (it) * 1986-12-17 1989-12-20 Sgs Microelettronica Spa Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione.
JPH081956B2 (ja) * 1987-11-06 1996-01-10 日産自動車株式会社 保護機能を備えた縦型ｍｏｓｆｅｔ
DE3855533T2 (de) * 1987-12-28 1997-01-23 Fuji Electric Co Ltd Halbleiteranordnung mit isoliertem Gate
JPH0716005B2 (ja) * 1988-04-08 1995-02-22 株式会社東芝 半導体装置
JP2653095B2 (ja) * 1988-04-22 1997-09-10 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
EP0341453B1 (de) * 1988-05-11 1993-08-25 Siemens Aktiengesellschaft MOS-Halbleiterbauelement für hohe Sperrspannung
JPH0775260B2 (ja) * 1988-06-01 1995-08-09 株式会社日立製作所 半導体装置
JP2755619B2 (ja) * 1988-10-19 1998-05-20 三洋電機株式会社 絶縁ゲート型半導体装置
US4980741A (en) * 1989-02-10 1990-12-25 General Electric Company MOS protection device
US5119162A (en) * 1989-02-10 1992-06-02 Texas Instruments Incorporated Integrated power DMOS circuit with protection diode
JP2786652B2 (ja) * 1989-02-28 1998-08-13 株式会社東芝 半導体装置
JPH0642555B2 (ja) * 1989-06-20 1994-06-01 株式会社東芝 半導体装置
DE4022022C2 (de) * 1989-07-12 1995-09-28 Fuji Electric Co Ltd Vertikal-Halbleitervorrichtung mit Zenerdiode als Überspannugsschutz
US5119153A (en) * 1989-09-05 1992-06-02 General Electric Company Small cell low contact resistance rugged power field effect devices and method of fabrication
US5234851A (en) * 1989-09-05 1993-08-10 General Electric Company Small cell, low contact assistance rugged power field effect devices and method of fabrication
US5021849A (en) * 1989-10-30 1991-06-04 Motorola, Inc. Compact SRAM cell with polycrystalline silicon diode load
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
JPH03238868A (ja) * 1990-02-15 1991-10-24 Nec Corp 縦型電界効果トランジスタ
JP2692350B2 (ja) * 1990-04-02 1997-12-17 富士電機株式会社 Ｍｏｓ型半導体素子
US5151387A (en) * 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
JP2672694B2 (ja) * 1990-07-13 1997-11-05 松下電子工業株式会社 Ｍｏｓｆｅｔ
JPH0473970A (ja) * 1990-07-16 1992-03-09 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
KR920007171A (ko) * 1990-09-05 1992-04-28 김광호 고신뢰성 반도체장치
US5291050A (en) * 1990-10-31 1994-03-01 Fuji Electric Co., Ltd. MOS device having reduced gate-to-drain capacitance
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
JPH04291767A (ja) * 1991-03-20 1992-10-15 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JPH04332163A (ja) * 1991-05-02 1992-11-19 Sony Corp 半導体メモリ
US5289028A (en) * 1991-11-04 1994-02-22 Motorola, Inc. High power semiconductor device with integral on-state voltage detection structure
JPH05218436A (ja) * 1992-02-03 1993-08-27 Nec Corp Ｐチャネル縦型ｍｏｓ電界効果トランジスタ
GB9207860D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor component
JP2956434B2 (ja) * 1992-10-30 1999-10-04 株式会社デンソー 絶縁分離形半導体装置
DE4308624A1 (de) * 1993-03-18 1994-09-22 Abb Management Ag MOS-gesteuertes Leistungshalbleiterbauelement
US6004840A (en) * 1994-04-15 1999-12-21 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion
EP0681319B1 (en) * 1994-04-15 2002-10-30 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
DE4423619A1 (de) 1994-07-06 1996-01-11 Bosch Gmbh Robert Laterale Halbleiterstruktur zur Bildung einer temperaturkompensierten Spannungsbegrenzung
US5714784A (en) * 1995-10-19 1998-02-03 Winbond Electronics Corporation Electrostatic discharge protection device
EP0773588B1 (en) * 1995-11-10 2002-06-19 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe MOS integrated device comprising a gate protection diode
KR970053932A (ko) * 1995-12-08 1997-07-31 김광호 트랜지스터의 래치 전압을 이용한 정전 내력 향상 모스 축전기
KR100206555B1 (ko) * 1995-12-30 1999-07-01 윤종용 전력용 트랜지스터
KR100256109B1 (ko) * 1997-05-07 2000-05-01 김덕중 전력 반도체 장치
US6268242B1 (en) 1997-12-31 2001-07-31 Richard K. Williams Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact
US6172383B1 (en) 1997-12-31 2001-01-09 Siliconix Incorporated Power MOSFET having voltage-clamped gate
JP3255147B2 (ja) 1998-06-19 2002-02-12 株式会社デンソー 絶縁ゲート型トランジスタのサージ保護回路
JP4620889B2 (ja) * 2001-03-22 2011-01-26 三菱電機株式会社 電力用半導体装置
US6455896B1 (en) * 2001-04-25 2002-09-24 Macronix International Co., Ltd. Protection circuit for a memory array
JP2004349331A (ja) * 2003-05-20 2004-12-09 Renesas Technology Corp パワーｍｏｓｆｅｔとパワーｍｏｓｆｅｔ応用装置およびパワーｍｏｓｆｅｔの製造方法
JP4577480B2 (ja) * 2003-06-06 2010-11-10 サンケン電気株式会社 絶縁ゲート型半導体装置
JP4929559B2 (ja) * 2003-10-30 2012-05-09 サンケン電気株式会社 半導体素子
US20060197153A1 (en) * 2005-02-23 2006-09-07 Chih-Feng Huang Vertical transistor with field region structure
US8476709B2 (en) * 2006-08-24 2013-07-02 Infineon Technologies Ag ESD protection device and method
JP5279290B2 (ja) * 2008-02-19 2013-09-04 セイコーインスツル株式会社 半導体装置
JP2010087196A (ja) * 2008-09-30 2010-04-15 Panasonic Corp 半導体装置
JP2009124169A (ja) * 2009-02-02 2009-06-04 Renesas Technology Corp 半導体装置及びその製造方法
US8164162B2 (en) * 2009-06-11 2012-04-24 Force Mos Technology Co., Ltd. Power semiconductor devices integrated with clamp diodes sharing same gate metal pad
US8629498B2 (en) * 2009-07-15 2014-01-14 Mitsubishi Electric Corporation Power semiconductor device and method for manufacturing the power semiconductor device
JP5961865B2 (ja) 2010-09-15 2016-08-02 ローム株式会社 半導体素子
US9929698B2 (en) * 2013-03-15 2018-03-27 Qualcomm Incorporated Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
JP2015018950A (ja) * 2013-07-11 2015-01-29 株式会社東芝 半導体装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3555374A (en) * 1967-03-03 1971-01-12 Hitachi Ltd Field effect semiconductor device having a protective diode
US4416049A (en) * 1970-05-30 1983-11-22 Texas Instruments Incorporated Semiconductor integrated circuit with vertical implanted polycrystalline silicon resistor
JPS5122794B1 (en]) * 1970-06-24 1976-07-12
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
CA941515A (en) * 1971-07-12 1974-02-05 Rca Corporation Gate protective device for insulated gate field-effect transistors
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors
JPS5138587A (en) * 1974-09-27 1976-03-31 Nippon Kayaku Kk Seruroozukeisenino senshokuhoho
JPS5189392A (en]) * 1975-02-03 1976-08-05
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
JPS5345978A (en) * 1976-10-08 1978-04-25 Hitachi Ltd Insulated-gate-protective semiconductor device
US4129879A (en) * 1977-04-21 1978-12-12 General Electric Company Vertical field effect transistor
JPS547881A (en) * 1977-06-21 1979-01-20 Victor Co Of Japan Ltd Mos field effect transistor
JPS5910587B2 (ja) * 1977-08-10 1984-03-09 株式会社日立製作所 半導体装置の保護装置
US4559694A (en) * 1978-09-13 1985-12-24 Hitachi, Ltd. Method of manufacturing a reference voltage generator device
US4267011A (en) * 1978-09-29 1981-05-12 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device
US4251876A (en) * 1978-11-03 1981-02-17 Mostek Corporation Extremely low current load device for integrated circuit
US4290185A (en) * 1978-11-03 1981-09-22 Mostek Corporation Method of making an extremely low current load device for integrated circuit
US4475964A (en) * 1979-02-20 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing a semiconductor device
JPS5664465A (en) * 1979-10-29 1981-06-01 Seiko Epson Corp C-mos integrated circuit
US4312680A (en) * 1980-03-31 1982-01-26 Rca Corporation Method of manufacturing submicron channel transistors
US4438448A (en) * 1980-07-18 1984-03-20 Trw Inc. Zig-zag V-MOS transistor structure
US4419808A (en) * 1980-12-15 1983-12-13 Rockwell International Corporation Method of producing redundant ROM cells
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
JPS5998557A (ja) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Ｍｏｓトランジスタ
JPH0638496B2 (ja) * 1983-06-27 1994-05-18 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
MY8600555A (en) 1986-12-31
US4688323A (en) 1987-08-25
US4831424A (en) 1989-05-16
DE3229250A1 (de) 1983-07-21
DE3229250C2 (en]) 1993-02-25
GB2103877B (en) 1985-07-03
HK45486A (en) 1986-06-27
JPS5825264A (ja) 1983-02-15
GB2103877A (en) 1983-02-23

Similar Documents

Publication Publication Date Title
JPH0427712B2 (en])
JP2988871B2 (ja) トレンチゲートパワーｍｏｓｆｅｔ
JP2766239B2 (ja) 高耐圧半導体装置
US5723890A (en) MOS type semiconductor device
JP4917709B2 (ja) 半導体装置
JPH11145466A (ja) Ｍｏｓ型半導体素子
US5654225A (en) Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof
CN101409285A (zh) 半导体装置及其制造方法
US5691555A (en) Integrated structure current sensing resistor for power devices particularly for overload self-protected power MOS devices
JP3189589B2 (ja) 絶縁ゲート型半導体装置
JP3869580B2 (ja) 半導体装置
JP4432332B2 (ja) 半導体素子及びその製造方法
JP5391261B2 (ja) 半導体装置
US4520382A (en) Semiconductor integrated circuit with inversion preventing electrode
JP2808871B2 (ja) Ｍｏｓ型半導体素子の製造方法
JP3099917B2 (ja) 電界効果トランジスタ
JP2755619B2 (ja) 絶縁ゲート型半導体装置
JP2926962B2 (ja) Ｍｉｓ型電界効果トランジスタを有する半導体装置
JP3311166B2 (ja) 絶縁ゲート型半導体装置
JP2926969B2 (ja) Ｍｉｓ型電界効果トランジスタを有する半導体装置
US20230155021A1 (en) Silicon carbide semiconductor device
JPH06349852A (ja) Ｍｏｓ型電界効果トランジスタ
JP3869581B2 (ja) 半導体装置およびその製法
JP5021862B2 (ja) ゲートとエミッタとの間の静電気防止のためのダイオードを含むｍｏｓ型半導体素子
JP3744196B2 (ja) 炭化珪素半導体装置及びその製造方法